Determination of oxygen concentration in heavily Sb-doped Si by means of coincident elastic recoil detection analysis-Reference-Cited by-同舟云学术

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Determination of oxygen concentration in heavily Sb-doped Si by means of coincident elastic recoil detection analysis

Published:1994-12 Issue:3-4 Volume:144 Page:173-176
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xu Yuesheng,Liu Caichi,Li Yangxian,Zhu Zeshao,Wang Hongmei,Wei Luncun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. VLSI Science and Technology;Shimura,1985

2. Infrared measurements of interstitial oxygen in heavily doped silicon

3. Proc. 5th Int. Symp. on Silicon Materials Science and Technology, Semiconductor Silicon 1986;Walizke,1986

4. The Influence of Dopants on the Reaction Between Liquid Silicon and Silica

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon;Journal of Crystal Growth;2003-09

2. Study on the oxygen concentration reduction in heavily Sb-doped silicon;Journal of Crystal Growth;1999-01

3. Diagnostic and monitoring tools of large scale Si-manufacturing: trace-analytical tools and techniques in Si-wafer manufacturing;IEEE Transactions on Semiconductor Manufacturing;1996

4. Combination mechanism of oxygen in heavily Sb-doped CZ silicon;1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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