Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Quantum well laser with single InAs monolayer in active region
2. NATO ASI Series;González;Series E: Applied Science,1989
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4. (InAs)1/(GaAs)4 Superlattice strained quantum well laser at 980 nm
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origin of sharp lines in photoluminescence emission from submonolayers of InAs in GaAs;Physical Review B;1997-02-15
2. Plasmon excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopy;Applied Surface Science;1996-09
3. Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy;Journal of Crystal Growth;1993-02
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