p-n junction diodes prepared in vapor-phase epitaxial ZnSe films using metallic Zn and Se
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. p‐type conduction in ZnSe grown by temperature difference method under controlled vapor pressure
2. Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe
3. Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy
4. Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
5. Low resistivep-type ZnSe: A key for an efficient blue electroluminescent device
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1. Cathodoluminescence analysis of cleaved facets of a ZnSe p–n junction;Journal of Applied Physics;2000-04-15
2. Optical constants of polycrystalline ZnSeCdSe alloy films;Optical Materials;1997-01
3. Luminescence properties of MgxZn1-xSe crystals;Semiconductor Science and Technology;1993-05-01
4. Characterization of vapor phase epitaxial ZnSe films;Journal of Electronic Materials;1993-05
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