Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
2. Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition
3. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
4. Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPE
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1. Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE;Journal of Crystal Growth;2017-06
2. Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers;physica status solidi (c);2016-02-25
3. Role of nitrogen precursors in MOVPE growth of ZnSe;Journal of Crystal Growth;1997-08
4. Photoassisted metalorganic vapor-phase epitaxy of ZnSe on GaAs;Applied Surface Science;1995-02
5. Photo-assisted metal-organic vapour phase epitaxy of zinc chalcogenides;Widegap II–VI Compounds for Opto-electronic Applications;1992
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