Si MAGFETs optimized for sensitivity and noise properties-Reference-Cited by-同舟云学术

Si MAGFETs optimized for sensitivity and noise properties

Published:1992-04 Issue:1-3 Volume:32 Page:656-660
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Mathieu N.,Giordano P.,Chovet A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. A silicon MOS magnetic field transducer of high sensitivity;Fry;IEEE Trans. Electron Devices,1969

2. A novel high-gain MOS magnetic field sensor;Misra;Sensors and Actuators,1986

3. New GaAs integrated magnetic-field sensors with high sensitivities;Mathieu;Sensors and Actuators A,1991

4. Comparison of Si and GaAs integrated magnetotransistors;Mathieu;E-MRS Conference, Strasbourg, France, 1991, Sensors and Actuators A,1992

5. Two-dimensional numerical modeling of magnetic-field sensors in CMOS technology;Nathan;IEEE Trans. Electron Devices,1985

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