Author:
Harendt Christine,Graf Heinz-Gerd,Penteker Elisabeth,Höfflinger Bernd
Subject
Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Wafer bonding for silicon-on-insulator technologies;Lasky;Appl. Phys. Lett.,1986
2. Bonding of silicon wafers for silicon-on-insulator;Mamszara;J. Appl. Phys.,1988
3. A. Nakagawa, K. Watanabe, Y. Yamaguchi, H. Ohashi and K. Furukawa, 1800 V bipolar-mode MOSFETS: a first application of silicon wafer direct bonding (SDB) technique to a power device, Proc. IEDM 86, pp. 122–125.
4. Bubble-free silicon wafer bonding in a non-cleanroom enviromunt;Stengl;Jpn. J. Appl. Phys.,1988
5. R. Stengl, T. Tan and U. Gösele, A model for the silicon wafer bonding process, Jpn. J. Appl. Phys., to be published.
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