Application of oxygen plasma processing to silicon direct bonding

Author:

Zucker O.,Langheinrich W.,Kulozik M.,Goebel H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Ultra-stable, high-temperature pressure sensors using silicon fusion bonding;Petersen;Sensors and Actuators,1990

2. 1800 V Bipolar-mode MOSFETs: a first application of silicon wafer direct bonding (SDB) technique to a power device;Nakagawa;Tech. Digest IEEE IEDM,1985

3. An NPN transistor fabricated by silicon wafer direct-bonding;Atsuta;9th Conf. Solid State Devices and Matter, Tokyo Japan,1987

4. A dielectrically isolated photodiode array by silicon-wafer direct bonding;Ohura;IEEE Electron Dev. Lett., EDL-8,1987

5. IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method;Bengtsson;Proc. ESSDERC,1989

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