The effect of gate-oxide process variations on the long-term fading of PMOS dosimeters-Reference-Cited by-同舟云学术

The effect of gate-oxide process variations on the long-term fading of PMOS dosimeters

Published:1993-06 Issue: Volume:37-38 Page:370-374
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Kelleher A.,McDonnell N.,O'Neill B.,Lane W.,Adams L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. RADFET: a review of the use of metal-oxide-silicon devices as integrating dosimeters;Holmes-Siedle;Int. J. Radiat. Applic. Instrum., Part C,1986

2. pMOS dosimeters: long term annealing and neutron response;Blamires;IEEE Trans. Nucl. Sci.,1983

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