a-Si:H position-sensitive detector with striped metal electrodes-Reference-Cited by-同舟云学术

a-Si:H position-sensitive detector with striped metal electrodes

Published:1992-02 Issue:3 Volume:30 Page:193-196
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Yamamoto Tatsuo,Murakami Kenji,Takayama Seiji,Ono Yoshimichi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. A new semiconductor photocell using lateral photoeffect;Wallmark;Proc. IRE,1957

2. The lateral photoeffect;Emmons;Solid-State Electron.,1967

3. Two-dimensional position-sensitive photodetector with high linearity made with standard i.c.-technology;Noorlag;Solid-State Electron.,1979

4. Some aspects on position sensitive photodetectors made of amorphous silicon;Ogita;Trans. IECE Jpn.,1986

5. An improvement of the tetralateral position sensitive detector (TPSD) with modified electrodes based on a-Si p-i-n structure;Dutta;Tech. Digest, 7th Sensor Symp., Japan,1988

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