1. Charging of pattern features during plasma etching;Arnold;J. Appl. Phys.,1991
2. Low temperature etching of Si in high-density plasma using SF6/O2;Bartha;J. Microelectron. Eng.,1995
3. Anisotropic etching of silicon;Bean;IEEE Trans. Electron Devices,1978
4. Becker V, Laermer F, Schilp A, Beck T 1999 Plasma etching installation. US Pat. 6 531 031.
5. Becker V, Laermer F, Schilp A 1998 Anisotropic plasma etching of trenches in silicon by control of substrate temperature. German Pat. DE 19841964, GB-2 341 348.