Dopants in GaN
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Publisher
Elsevier
Reference139 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Luminescence in GaN
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
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1. Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition;Applied Surface Science;2024-05
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