Band gap modulation and indirect to direct band gap transition in ZnS/Si and Si/ZnS core/shell nanowires-Reference-Cited by-同舟云学术

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Band gap modulation and indirect to direct band gap transition in ZnS/Si and Si/ZnS core/shell nanowires

Published:2017-11 Issue: Volume:524 Page:163-172
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ur Rehman Shafiq,Li Z.Y.,Li H.M.,Ding Z.J.

Funder

National Natural Science Foundation of China

Special Program for Applied Research on Super Computation of the NSFC-Guangdong Joint Fund

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference63 articles.

1. Structural and electronic properties of the adsorbed and defected Cu nanowires: A density-functional theory study

2. First-principles study on structural and electronic properties of copper nanowire encapsulated into GaN nanotube

3. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

4. Superionic and electronic conductivity in monolayer W2C: ab initio predictions

5. Mechanical properties of kinked silicon nanowires

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