Hydrogen-related defects in Al 2 O 3 layers grown on n -type Si by the atomic layer deposition technique
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
2. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
3. Silicon surface passivation by atomic layer deposited Al2O3
4. Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas
5. Process Temperature Dependence of Al2O3Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells
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1. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023
2. Passivation and Electrical Properties of Alumina Layers Deposited by Atomic‐Layer Deposition with Different Precursors;physica status solidi (a);2022-05-29
3. Bayesian Machine Learning for Efficient Minimization of Defects in ALD Passivation Layers;ACS Applied Materials & Interfaces;2021-11-04
4. Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique;Journal of Vacuum Science & Technology B;2018-11
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