The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)-Reference-Cited by-同舟云学术

The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

Published:2020-04 Issue: Volume:582 Page:411958
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Altindal Semsettin,Farazin Javid,Pirgholi-Givi Gholamreza,Maril Elif,Azizian-Kalandaragh Yashar

Funder

Firat University Scientific Research Projects Management Unit

Gazi Üniversitesi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures;Buyukbas-Ulusan;J. Mater. Sci. Mater. Electron.,2019

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