A comparative study of Schottky barrier height enhancement by realized pseudo-Schottky diodes on p-InP
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. An original methodology dedicated to real-time detection of oxidizing gases based on pseudo-Schottky diode junction
2. H2, CO and high vacuum regeneration of ozone poisoned pseudo-Schottky Pd–InP based gas sensor
3. Gas sensing properties of pseudo-Schottky diodes on p-type indium phosphide substrates
4. Highly NO2 sensitive pseudo Schottky barrier diodes on p-type InP with improved electrical characteristics
5. Improvement in Sensitivity and Selectivity of InP-Based Gas Sensors: Pseudo-Schottky Diodes With Palladium Metallizations
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1. Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure;Vacuum;2015-09
2. Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature;Indian Journal of Physics;2015-08-29
3. Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure;Electronic Materials Letters;2015-01
4. The effects of thermal annealing on the electrical characteristics of Au/n–InP/In diode;Materials Science in Semiconductor Processing;2014-12
5. Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures;Superlattices and Microstructures;2014-07
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