Homogenization of CZ Si wafers by Tabula Rasa annealing
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
2. A microscopically accurate continuum model for void formation during semiconductor silicon processing
3. Coupled-flux nucleation modeling of oxygen precipitation in silicon
4. Modeling of transient point defect dynamics in Czochralski silicon crystals
5. Intrinsic Point Defects and Impurities in Silicon Crystal Growth
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon;IEEE Journal of Photovoltaics;2020-11
2. Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results;IEEE Journal of Photovoltaics;2017-01
3. Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods;Physica B: Condensed Matter;2012-08
4. Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers;Journal of Crystal Growth;2012-06
5. Oxygen Precipitation Studied by X-Ray Diffraction Techniques;Solid State Phenomena;2011-08
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