Simulation study of GaN n-MOSFETs by two-dimensional full band Monte Carlo approach-Reference-Cited by-同舟云学术

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Simulation study of GaN n-MOSFETs by two-dimensional full band Monte Carlo approach

Published:2010-12 Issue:24 Volume:405 Page:4925-4930
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Guo Baozeng,Guo Hui,Zhang Suoliang,Song Dengyuan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Polyimide Passivated AlGaN–GaN HFETs With 7.65 W/mm at 18 GHz

2. MESFETs Made From Individual GaN Nanowires

3. Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy

4. Experimental demonstration of enhancement mode GaN MOSFETs

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