High performance Schottky UV photodetectors based on epitaxial AlGaN thin film
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. High detectivity InGaN-GaN multiquantum well p-n junction photodiodes
2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications
3. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
4. Multilayer (Al,Ga)N Structures for Solar-Blind Detection
5. Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity
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1. MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlₓGa₁–ₓN Hetero-Epilayers;IEEE Transactions on Electron Devices;2024-07
2. Non-monotonic effect of growth pressure on the responsivity of AlGaN ultraviolet Schottky detectors;Optical Materials Express;2023-10-11
3. Metal-semiconductor-metal solar-blind ultraviolet photodetector based on Al0.55Ga0.45N/Al0.4Ga0.6N/Al0.65Ga0.35N heterostructures;Optics Express;2023-08-30
4. Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids;Sensors;2023-05-02
5. Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors;Nanomaterials;2022-09-11
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