Molecular dynamics simulations of atomic assembly in the process of GaN film growth
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Towards more accurate molecular dynamics calculation of thermal conductivity: Case study of GaN bulk crystals
2. Atomic assembly during GaN film growth: Molecular dynamics simulations
3. Band-edge photoluminescence and reflectivity of nonpolar(112¯0)and semipolar(112¯2)GaN formed by epitaxial lateral overgrowth on sapphire
4. Reduction of stacking fault density in m-plane GaN grown on SiC
5. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers
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1. Molecular dynamics simulations and experimental studies on low-temperature growth of GaN;Materials Research Express;2024-03-01
2. Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation;Crystal Growth & Design;2023-08-07
3. Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation;Vacuum;2022-11
4. Review of atomic layer deposition process, application and modeling tools;Materials Today: Proceedings;2022
5. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process;Crystals;2020-02-24
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