Surface morphology and electronic structure of halogen etched InAs (111)-Reference-Cited by-同舟云学术

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Surface morphology and electronic structure of halogen etched InAs (111)

Published:2012-05 Issue:10 Volume:407 Page:1591-1594
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Eassa N.,Murape D.M.,Betz R.,Neethling J.H.,Venter A.,Botha J.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Materials growth for InAs high electron mobility transistors and circuits

2. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

3. Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor

4. MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices

5. FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems;Nanoscale Research Letters;2015-04-29

2. On the coupling of solvent characteristics to the electronic structure of solute molecules;Physical Chemistry Chemical Physics;2014

3. Surface modification of bulk n-InAs (111)A etched in bromine–methanol;Current Applied Physics;2013-03

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