Effects of inelastic interaction of the non-equilibrium electrons with the neutral impurities on the non-ohmic characteristics of a compensated semiconductor compound at low lattice temperatures-Reference-Cited by-同舟云学术

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Effects of inelastic interaction of the non-equilibrium electrons with the neutral impurities on the non-ohmic characteristics of a compensated semiconductor compound at low lattice temperatures

Published:2021-05 Issue: Volume:608 Page:412758
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Saha S.,Mukhopadhyay S.,Bhattacharya D.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. High Field Transport in Semiconductors;Conwell,1967

2. Electron Transport in Compound Semiconductor;Nag,1980

3. Galvanomagnetic and recombination effects in semiconductors in a strong electric field;Kachlishvili;Phys. Status Solidi,1976

4. Electron drift velocity in silicon;Canali;Phys. Rev. B,1975

5. Theory of Electrical Transport in Semiconductors;Nag,1972

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