Exciton states in zinc-blende GaN/AlGaN quantum dot: Effects of electric field and hydrostatic pressure
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
2. Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates
3. Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction
4. GaN quantum dots as optical transducers for chemical sensors
5. Exciton states in wurtzite InGaN strained coupled quantum dots: Effects of piezoelectricity and spontaneous polarization
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1. Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology;ACS Applied Nano Materials;2022-03-04
2. Numerical modeling of electronic and electrical characteristics of InGaN/GaN multiple quantum well solar cells;Journal of Photonics for Energy;2020-12-04
3. Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects;AIP Advances;2019-04
4. Effects of the temperature and pressure on the electronic and optical properties of an exciton in GaAs/Ga 1−x Al x As quantum ring;Physica B: Condensed Matter;2018-06
5. Simultaneous effects of pressure and temperature on the optical transition energies in a Ga 0.7 In 0.3 N/GaN quantum ring;Chemical Physics;2017-09
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