Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices-Reference-Cited by-同舟云学术

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Published:2022-05 Issue: Volume:632 Page:413730
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hu Lifang^ORCID,Gao Wei,Xiao Ming,Li Zihao

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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