Optical and electrical transport mechanisms in Si-nanocrystal-based LEDs-Reference-Cited by-同舟云学术

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Optical and electrical transport mechanisms in Si-nanocrystal-based LEDs

Published:2003-04 Issue: Volume:17 Page:604-606
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

De la Torre J.,Souifi A.,Lemiti M.,Poncet A.,Busseret C.,Guillot G.,Bremond G.,Gonzalez O.,Garrido B.,Morante J.R.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide

3. Stable and efficient electroluminescence from a porous silicon‐based bipolar device

4. High quantum efficiency for a porous silicon light emitting diode under pulsed operation

5. Temperature dependence of the energy gap in semiconductors

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoinduced current and emission induced by current in a nanowire transistor: Temperature dependence;Pramana;2015-10-06

2. Stimulated Emission and Laser Processes;Semiconductor Optics;2012

3. Electrical transport mechanisms in three dimensional ensembles of silicon quantum dots;Journal of Applied Physics;2011-09-15

4. Fabrication of a silicon nanostructure-based light emitting device;Advances in Natural Sciences: Nanoscience and Nanotechnology;2010-06-01

5. Electrical Transport Mechanisms in Ensembles of Silicon Nanocystallites;Silicon Nanocrystals;2010-04-29

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