Hot electron light emission and absorption processes in a Top Hat structured bi-directional wavelength converter/amplifier-Reference-Cited by-同舟云学术

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Hot electron light emission and absorption processes in a Top Hat structured bi-directional wavelength converter/amplifier

Published:2003-04 Issue: Volume:17 Page:610-612
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Wah Jiing-Yeh,Balkan Naci,Boland-Thoms Adrian,Roberts J.S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Hot electron light-emitting and lasing semiconductor heterostructures--type 1

2. Hot-electron VCSEL

3. Non-linear carrier dynamics in hot electron vertical cavity surface emitting laser

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device;Journal of Luminescence;2024-08

2. Light Logic Gates with GaAs‐Based Structures;physica status solidi (RRL) – Rapid Research Letters;2024-07-04

3. Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology;Engineering Research Express;2022-03-01

4. A novel hot carrier-induced blue light-emitting device;Journal of Alloys and Compounds;2021-11

5. Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation;Nanoscale Research Letters;2012-09-25

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