A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Quantized conductance of point contacts in a two-dimensional electron gas
2. One-dimensional transport and the quantisation of the ballistic resistance
3. Quantum Hall effect at a four-terminal junction
4. Resonant tunneling via quantum bound states in a classically unbound system of crossed, narrow channels
5. Circular bends in electron waveguides
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2. Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions;Japanese Journal of Applied Physics;2011-06-01
3. Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations;Solid-State Electronics;2011-02
4. Acoustic phonon selective transport and non-integer quantized thermal conductance in a three-dimensional asymmetric quantum structure;Physics Letters A;2010-04
5. Boolean Logic Gates Utilizing GaAs Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates;Japanese Journal of Applied Physics;2009-06-22
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