Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime-Reference-Cited by-同舟云学术

Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime

Published:1998-10 Issue:1-3 Volume:3 Page:1-7
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Hess K.,Register L.F.,Tuttle B.,Lyding J.,Kizilyalli I.C.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. S.L.Chuang, Physics of Optoelectronic Devices, Wiley, New York, 1995.

2. W.D. Laidig, N. Holonyak, Jr., M.D. Camras, K. Hess, J.J. Coleman, P.D. Dapkus, J. Bardeen, Appl. Phys. Lett. 38 (1981) 776.

3. K. Hess, Advanced Theory of Semiconductor Devices, Prentice-Hall, Englewood Cliffs, NJ, 1988.

4. J.W. Lyding et al., Applied Surface Science 130–132 (1998) 221.

5. J.W. Lyding, K. Hess, I.C. Kizilyalli, Appl. Phys. Lett. 68 (1996) 2526, and I.C. Kizilyalli, J.W. Lyding, K. Hess, IEEE Electron Dev. Lett. 18 (1997) 81.

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range;Micromachines;2023-10-30

2. Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect;Semiconductor Science and Technology;2022-12-22

4. Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory;Physical Review B;2021-09-30