Effect of vacancies on nucleation of oxide precipitates in silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Nucleation of oxide precipitates in vacancy-containing silicon
2. Vacancy-Assisted Oxygen Precipitation Phenomena in Si
3. Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
4. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior
5. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
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4. Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers;IEEE Journal of Photovoltaics;2018-07
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