Benefits of chemical beam epitaxy for micro and optoelectronic applications-Reference-Cited by-同舟云学术

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Benefits of chemical beam epitaxy for micro and optoelectronic applications

Published:1996-01 Issue:4 Volume:33 Page:473-495
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Benchimol Jean-Louis,Alexandre F.,Lamare Bruno,Legay Philippe

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference58 articles.

1. Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy

2. Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers

3. Carbon incorporation in AlGaAs grown by CBE

4. Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

5. Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgallium

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Geometry of Chemical Beam Vapor Deposition System for Efficient Combinatorial Investigations of Thin Oxide Films: Deposited Film Properties versus Precursor Flow Simulations;ACS Combinatorial Science;2016-03-01

2. III-V Solar Cells;Solar Cell Materials;2014-01-17

3. Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs;Journal of Crystal Growth;2000-02

4. Chapter 2. CVD Reactors and Delivery System Technology;Chemical Vapour Deposition

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