MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices-Reference-Cited by-同舟云学术

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MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

Published:2000-01 Issue:1-4 Volume:41 Page:57-83
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Kirchner C.,Schwegler V.,Eberhard F.,Kamp M.,Ebeling K.J.,Prystawko P.,Leszczynski M.,Grzegory I.,Porowski S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

2. M. Kamp, Opt. Quantum Electron. (to be published)

3. Light scattering in high‐dislocation‐density GaN

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2. THz Solid-State Source Based on IMPATT Devices;Terahertz Biomedical and Healthcare Technologies;2020

3. IMPATT devices based on group III–V compound semiconductors: prospects as potential terahertz radiators;HKIE Transactions;2014-07-03

4. Excellent crystallinity of truly bulk ammonothermal GaN;Journal of Crystal Growth;2008-08

5. Gallium nitride bulk crystal growth processes: A review;Materials Science and Engineering: R: Reports;2006-01

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