Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Magnetic tunnel junctions thermally stable to above 300 °C
2. Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions
3. Temperature dependence and annealing effects on spin dependent tunnel junctions
4. Temperature stability of Co/Al2O3/Co junctions
5. Spin-tunnel-junction thermal stability and interface interdiffusion above 300 °C
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1. Structural and optical characteristics of Ce, Nd, Gd, and Dy-doped $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 thin films;Pramana;2017-06-19
2. Magnetic oxide formation at Al2O3/Co84Fe16interface in magnetic tunnel junction;Physical Review B;2011-05-31
3. Effect of annealing and applied bias on barrier shape in CoFe/MgO/CoFe tunnel junctions;Physical Review B;2011-04-12
4. Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes;Physical Review B;2010-04-07
5. Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers;Applied Physics A;2009-08-28
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