Simulation of the high frequency C–V characteristics of lateral PN junctions on polysilicon films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Transport properties of polycrystalline silicon films
2. Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach
3. Numerical simulation of polycrystalline-Silicon MOSFET's
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1. Preparation and characterization of p- NiO:Li thin films as schottky photodiode;Journal of Physics: Conference Series;2019-07-01
2. Impact of film thickness on threshold voltage of polysilicon TFTs;Journal of Physics and Chemistry of Solids;2011-10
3. Experimental study and two-dimensional modeling of avalanche breakdown voltage in polycrystalline silicon p-n junctions;Journal of Applied Physics;2007-05-15
4. Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode;Materials Science and Engineering: B;2005-07
5. Two-dimensional simulation of the effects of grain boundaries on theC–Vcharacteristics of P+N polysilicon diodes;Journal of Physics D: Applied Physics;2005-02-04
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