CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off-Reference-Cited by-同舟云学术

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CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off

Published:2002-05 Issue:1-3 Volume:93 Page:68-72
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kneissl Michael,Wong William S,Treat David W,Teepe Mark,Miyashita Naoko,Johnson Noble M

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

3. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

4. Study on Droop Characteristics of Laser Diodes as Light Sources of Laser Beam Printer

5. Characterization testing of monolithic dual-beam visible diode lasers with a 50-um channel separation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, electronic and energetic properties of GaN[0001]/Ga2O3[100] heterojunctions: A first-principles density functional theory study;Scripta Materialia;2011-09

2. 10.2493/jjspe.77.400;Journal of the Japan Society for Precision Engineering;2011

3. Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques;Applied Physics Letters;2007-09-17

4. Violet‐emitting diode lasers on low defect density GaN templates;physica status solidi (c);2005-04-11

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