Investigations on the CdS passivated anodic oxide–InP interface for MOS structures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Passivation of InP using In(PO3)3‐condensed phosphates: From oxide growth properties to metal‐insulator‐semiconductor field‐effect‐transistor devices
2. Long-term stability of InP MIS devices
3. Channel mobility enhancement in InP metal‐insulator‐semiconductor field‐effect transistors
4. Sulfur as a surface passivation for InP
5. Sulfur Passivation of InP and GaAs
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1. Memory Functions of Cadmium Sulfide Embedded Zr-Doped HfO2High-k Dielectrics;ECS Journal of Solid State Science and Technology;2018
2. Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces;Applied Physics Letters;2010-01-04
3. Wet chemical cleaning of InP surfaces investigated byin situandex situinfrared spectroscopy;Journal of Applied Physics;2003-08-15
4. In situ measurements of GaN photoluminescence at metal and electrolyte contacts;Applied Physics Letters;2002-10-21
5. Growth of Anodic Films on Compound Semiconductor Electrodes: InP in Aqueous (NH 4 ) 2 S;Monatshefte f�r Chemie / Chemical Monthly;2002-06-01
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