Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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2. Oxygen in Silicon;Shimura,1994
3. Quantitative Evaluation of Precipitated Oxygen in Silicon by Infrared Spectroscopy: Still an Open Problem
4. A. Sassella, A. Borghesi, P. Geranzani, G. Borionetti, Appl. Phys. Lett. 75 (1999) 1131.
5. Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy
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4. IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon;Journal of Materials Science: Materials in Electronics;2017-04-07
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