Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes-Reference-Cited by-同舟云学术

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Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Published:1999-07 Issue: Volume:61-62 Page:320-324
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Danielsson E,Zetterling C.-M,Östling M,Breitholtz B,Linthicum K,Thomson D.B,Nam O.-H,Davis R.F

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Proceedings of the IEDM, Washington DC;Ping,1997

2. MIJ-NSR, 1 http://nsr.mihj.org/1/39/complete.html (Article 39);Pankove,1996

3. Proceedings of the IEDM, Washington DC;Gaska,1997

4. AlGaN/GaN HEMTs grown on SiC substrates

5. Group III Nitrides, EMIS Data Reviews No. 11;Strite,1994

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wide gap semiconductor microwave devices;Journal of Physics D: Applied Physics;2007-10-05

2. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures;Materials Science Forum;2006-10

3. Resonant tunneling effect in metal-semiconductor-metal ultraviolet detectors grown with AlGaN∕GaN multi-quantum-well interlayer;Applied Physics Letters;2006-07-31

4. Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT;Solid-State Electronics;2005-02

5. Electrical Properties of n-GaN∕p-SiC Heterojunctions;Semiconductors;2005

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