Bipolar HiPIMS: The role of capacitive coupling in achieving ion bombardment during growth of dielectric thin films-Reference-Cited by-同舟云学术

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Bipolar HiPIMS: The role of capacitive coupling in achieving ion bombardment during growth of dielectric thin films

Published:2021-06 Issue: Volume:416 Page:127152
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Du Hao,Zanáška Michal,Brenning Nils,Helmersson Ulf

Funder

National Natural Science Foundation of China

Guizhou Provincial Natural Science Foundation

Swedish Foundation for Strategic Research

Swedish Research Council

Youth Science and Technology Talent Development Project from Guizhou Provincial Department of Education

Eurostars

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference39 articles.

1. Ion beam bombardment effects during films deposition;Rossnagel;Vacuum.,1988

2. Understanding the surface diffusion processes during magnetron sputter-deposition of complex oxide mg–Al–O thin films;Georgieva;Cryst. Growth Des.,2011

3. Polycrystalline TiN films deposited by reactive bias magnetron sputtering: effects of ion bombardment on resputtering rates, film composition, and microstructure;Petrov;J. Vac. Sci. Technol.,1992

4. Structure modification by ion bombardment during deposition;Mattox;J. Vac. Sci. Technol.,1972

5. Crystallinity and photocatalytic activity of TiO2 films deposited by reactive sputtering with radio frequency substrate bias;Song;Thin Solid Films,2006

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