Zinc oxide thin-film transistors fabricated via low-temperature hydrothermal method-Reference-Cited by-同舟云学术

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Zinc oxide thin-film transistors fabricated via low-temperature hydrothermal method

Published:2013-09 Issue: Volume:231 Page:428-432
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Wang Jyh-Liang,Yang Po-Yu,Juang Miin-Horng,Hsieh Tsang-Yen,Hwang Chuan-Chou,Juan Chuan-Ping,Lee I-Che

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference18 articles.

1. Ultraviolet detecting properties of ZnO-based thin film transistors

2. Investigation on synthesis, characterization, and electronic behaviour of zinc oxide thin films in relation to fabrication of oxygen gas sensor

3. Highly textured ZnO thin films doped with indium prepared by the pyrosol method

4. ZnO p–n junctions produced by a new route

5. Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanostructured Thin Films by Hydrothermal Method;Simple Chemical Methods for Thin Film Deposition;2023

2. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors;Nanomaterials;2020-11-27

3. Electrospun core–sheath PAN@PPY nanofibers decorated with ZnO: photo-induced water decontamination enhanced by a semiconducting support;Journal of Materials Chemistry A;2019

4. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors;Materials;2018-12-09

5. Effects of e-beam deposited gate dielectric layers with atmospheric pressure plasma treatment for IGZO thin-film transistors;Surface and Coatings Technology;2016-11

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