Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
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2. Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-05
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4. Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes;Materials Science Forum;2023-06-06
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