1. S. Haukka, ALD technology — Present and future challenges, 210th ECS meeting, Cancun, October 29 – November 3, in press, ECS transactions.
2. Integration of Capacitor for Sub-100-nm DRAM Trench Technology, Digest of Technical Papers Symposium on VLSI technol.;Lutzen,2002
3. A.M. Lankhorst, B.D. Paarhuis, H.J.C.M. Terhorst, P.J.P.M. Simons and C.R. Kleijn, Transient ALD simulations for a multi-wafer reactor with trenched wafers, EuroCVD16, The Hague, (this conf.), Surf. & Coat. Technol. in press.
4. A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches
5. Patents pending.