A study on film formation mechanisms and precursor/solvent compatibility in PP-MOCVD of Al 2 O 3 films using aluminum tri-sec-butoxide with hexane and toluene
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference36 articles.
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3. Structural and electrical properties of Al2O3 thin films on p-Si grown by low-pressure metalorganic chemical vapor deposition;Kim;Appl. Surf. Sci.,1993
4. Characteristics of Al2O3 thin films deposited using dimethylaluminum isopropoxide and trimethylaluminum precursors by the plasma-enhanced atomic-layer deposition method;Koo;J. Korean Phys. Soc.,2006
5. Al2O3 as an antireflection coating for InP/InGaAsP LEDs;Chin;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,1983
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