Beam test results of an ion-implanted capacitively coupled silicon strip detector processed on a 100 mm silicon wafer-Reference-Cited by-同舟云学术

Beam test results of an ion-implanted capacitively coupled silicon strip detector processed on a 100 mm silicon wafer

Published:1991-12 Issue:3 Volume:310 Page:677-680
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Hietanen I.,Lindgren J.,Orava R.,Tuuva T.,Brenner R.,Andersson M.,Leinonen K.,Ronkainen H.,Turala M.,Weilhammer P.,Dulinski W.,Husson D.,Lounis A.,Schaeffer M.,Turchetta R.,Chauveau J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

2. Development of high density readout for silicon strip detectors

3. Beam test results from a prototype for the delphi microvertex detector

4. A. Lang, J.P. Vanuxem, CERN-EP-Electronics note 86-01.

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