RF-MBE growth and orientation control of GaN on epitaxial graphene
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference34 articles.
1. Review—The Current and Emerging Applications of the III-Nitrides
2. R. A. Ferreyra, C. Zhu, A. Teke, H. Morkoç (2017) Group III Nitrides. In: Kasap S., Capper P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham.
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. GaN Growth Using GaN Buffer Layer
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