Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction-Reference-Cited by-同舟云学术

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Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Published:2019-06 Issue: Volume:13 Page:102308
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Li Xiaoxia,Sun Bai,Hou Wentao,Chen Jiao,Zheng Pingping,Mao Shuangsuo,Zhu Shouhui,Xia Yudong,Fu Guoqiang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference39 articles.

1. Nanofilament dynamics in resistance memory: model and validation;Lu;ACS Nano,2015

2. Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes;Kolar;J Mater Chem C,2014

3. The switching location of a bipolar memristor: chemical, thermal and structural mapping;Strachan;Nanotechnology,2011

4. Sericin for resistance switching device with multilevel nonvolatile memory;Wang;Adv Mater,2013

5. Development of Ag/ZnO/FTO thin film memristor using aqueous chemical route;Dongale;Mater Sci Semicond Process,2015

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1. Investigation of resistive switching behaviors of cuprous phosphide thick film;Journal of Alloys and Compounds;2024-01

2. Impact of Top Electrodes (Cu, Ag, and Al) on Resistive Switching behaviour of Cu‐rich Cu₂ZnSnS₄ (CZTS) Ideal Kesterite;ChemPhysChem;2023-09-15

3. Silicon based Bi_0.9La_0.1FeO₃ ferroelectric tunnel junction memristor for convolutional neural network application;Nanoscale;2023

4. Effect of swift heavy ion irradiation on the electrical characteristics of oxide-based heterojunction;Metal Oxide Defects;2023

5. A facile fabrication of lead-free Cs2NaBiI6 double perovskite films for memory device application;Journal of Alloys and Compounds;2022-07

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