Electron transport in a stressed moiré bigraphene structure-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electron transport in a stressed moiré bigraphene structure

Published:2023-11 Issue: Volume:54 Page:107140
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Sergeyev Daulet^ORCID,Duisenova Ainur,Solovjov Andrei,Ismayilova Narmin

Funder

Ministry of Education and Science of the Republic of Kazakhstan

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference61 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;Science,2004

2. Graphene: status and prospects;Geim;Science,2009

3. The rise of graphene;Geim;Nat Mater,2007

4. MoS2 and WS2 analogues of graphene;Matte;Angew Chem Int Ed,2010

5. Band gap determination of nanoribbons of graphene, h- boron nitride, phosphorene, silicene, stanene, and germanene;Pandya;J Phys D Appl Phys,2020

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP