Relaxation and photoluminscence of different post-processed Si/Si1−xGex quantum well structures grown by CVD-Reference-Cited by-同舟云学术

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Relaxation and photoluminscence of different post-processed Si/Si1−xGex quantum well structures grown by CVD

Published:2001-11 Issue:11 Volume:45 Page:1915-1919
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Myrberg T.,Jacob A.P.,Nur O.,Zhao Q.X.,Willander M.,DeBoer W.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. SiGe band engineering for MOS CMOS and quantum effect devices;Wang;Mater Sci Mater Electron,1995

2. Iyer SS, Pattom GL, Stork JM, Meyrson BS, Harame DL. Heterojunction bipolar transistors using Si–Ge alloys. IEEE Trans Electron Dev 1989;36 (10)2043-64

3. The n-channel SiGe/Si modulation-doped field-effect transistor;Daembkes;IEEE Trans Electron Dev,1986

4. Si/Si1−xGex/Si multiple quantum well infrared detector;Karunasiri;Appl Phys Lett,1991

5. Yousif MYA, Nur O, Chretien O, Fu Y, Willander M. Threshold voltage and charge control considerations in double quantum well Si/Si1−xGex p-type MOSFETs. Solid-State Electron 1998;42(6):951–6

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