Structural characterisation of polycrystalline SiGe thin film-Reference-Cited by-同舟云学术

Structural characterisation of polycrystalline SiGe thin film

Published:2001-11 Issue:11 Volume:45 Page:1963-1966
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Teh L.K.,Choi W.K.,Bera L.K.,Chim W.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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3. Deposition and properties of low-pressure chemical-vapor deposited polycrystalline silicon–germanium film;King;J Electrochem Soc,1994

4. Rem J, de Leuw M, Holleman J, Verweij JF. Furnace and rapid thermal crystallisation of amorphous GexSi1−x and Si for thin film transistors. Thin Solid Films 1997;296:152–6

5. Crystallisation of amorphous SiGe thin films;Tong;Thin Solid Films,1996

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