InSb1−xNx growth and devices-Reference-Cited by-同舟云学术

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InSb1−xNx growth and devices

Published:2003-03 Issue:3 Volume:47 Page:387-394
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ashley T.,Burke T.M.,Pryce G.J.,Adams A.R.,Andreev A.,Murdin B.N.,O’Reilly E.P.,Pidgeon C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Growth and luminescence properties of GaPN and GaP1−xNx;Baillargeon;J. Vac. Sci. Technol.,1992

2. Red shift of photoluminescence and absorption in dilute GaAsN alloy layers;Weyers;Jpn. J. Appl. Phys. 2,1992

3. Electronic-structure and phase-stability of GaAs1−xNx alloys;Neugebauer;Phys. Rev.,1995

4. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP;Bellaiche;Phys. Rev.,1996

5. Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys;Lindsay;Solid State Commun.,1999

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1. Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy;Advanced Fiber Laser Conference (AFL2023);2024-03-18

2. InPNBi/InP heterostructures for optoelectronic applications: A k‧p investigation;Materials Science in Semiconductor Processing;2022-10

3. Bandgap energies of cubic AlxIn1−xNySb1−y calculated by means of the dielectric method;MRS Advances;2022-06-20

4. A Study on the Consequence of Compressive and Tensile Strain on the Electronic Properties of InPNBi using Multi-band k dot p Hamiltonian;Materials Today: Proceedings;2022

5. InSbNBi/InSb heterostructures for long wavelength infrared photodetector applications: A 16 band k · p study;Journal of Applied Physics;2020-09-07

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