Electrical properties and deep levels in bulk solution grown GaAs crystal-Reference-Cited by-同舟云学术

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Electrical properties and deep levels in bulk solution grown GaAs crystal

Published:2002-12 Issue:12 Volume:46 Page:2161-2168
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Markov A.V,Polyakov A.Y,Smirnov N.B,Govorkov A.V,Biberin V.I,Korovin N.S,Gavrin V.N,Efimov G.D,Kalikhov A.V,Kozlova Y.P,Veretenkin E.P,Eremin V.K,Verbitskaya E.M,Bowles T.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Semi-insulating III–V materials;Makram-Ebeid,1986

2. Study of GaAs as a material for solar neutrino detectors

3. Semi-insulating LEC GaAs as a material for radiation detectors: materials science issues

4. Comparison of deep levels spectra and electrical properties of GaAs crystals grown by vertical Bridgeman and by liquid encapsulated Czochralski methods

5. Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy;Journal of Crystal Growth;2011-04

2. Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry;Solid-State Electronics;2007-07

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