Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation-Reference-Cited by-同舟云学术

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Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation

Published:1999-10 Issue:10 Volume:43 Page:1869-1877
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Galdin S.,Arbey M.-E.,Dollfus P.,Hesto P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. CMOS Circuit Speed and Buffer Optimization

2. Sakurai T, Newton AR. IEEE J Solid-State Circuits 1990;25(2):584–594 (Reprint in: IEEE Trans Electron Devices 1991;ED-38(4):887–894)

3. Modeling the influence of the transistor gain ratio and the input-to-output coupling capacitance on the CMOS inverter delay

4. Analytical transient response and propagation delay evaluation of the CMOS inverter for short-channel devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bibliography;The Wigner Monte Carlo Method for Nanoelectronic Devices;2013-03-20

2. Spin-dependent collection in ferromagnet/semiconductor contacts;Journal of Magnetism and Magnetic Materials;2002-02

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